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tg s2351 dc C 6 ghz high power spdt switch data sheet: rev b 06/20/12 - 1 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting th e digital world to the global network ? applications ? high power switching product features functional block diagram ? frequency range: dc C ? power handling : up to 40 w ? insertion loss: < 0.8 db ? isolation: - 4 0 db typical ? switching speed: < 1 5 ns ? c ontrol voltages: 0 v/ - 40 v from either side of mmic ? dimensions: 1.15 x 1.65 x 0.1 mm general description bond pad configuration the triquint tg s2351 is a single - pole, double - throw (spdt) switch. the tg s2351 operates from dc to 6 ghz and i s designed using triquints bond pad # symbol 1 rf i n 2, 7 v c2 3, 6 v c1 4 rf out1 5 rf out 2 ordering information part no. eccn description tg s2351 ear99 dc C 3, 6 vc2 j1 rf in vc1 j2 rf out1 j3 rf out2 5 4 2, 7 1
tg s2351 dc C 6 ghz high power spdt switch data sheet: rev b 06/20/12 - 2 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting th e digital world to the global network ? specifications absolute maximum ratings parameter rating control voltage, vc - 50 v control current , ic - 1 to 7.8 ma power dissipation , pdiss 10 w rf input power, cw, 50,t o c mounting temperature (30 seconds) 320 o c storage temperature - 55 to 15 0 o c operation of this device outside the parameter ranges given ab ove may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter min typ ical max units v c 1 - 40 / 0 v vc2 0 / - 40 v ic1 / ic2 - 0. 4 to 0.1 ma electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25oc, vc1 = - 40/0 v, vc2 = 0/ - 40 v, se e function table at application circuit on page 6. parameter min typical max units operational frequency range dc 6 ghz control current (ic1/ ic2) - 1 0.1 ma insertion loss (on - state): dc to 6 ghz 0.5 1 db input return loss C C C 1/ 46 dbm output power @ pin = 46dbm, 1 - 6ghz 44 .5 45 4 6 dbm insertion loss temperature coefficient - 0.003 db/c output toi @ pin = 23 dbm 50 dbm switching speed C 2 / 15 ns switching speed C 2 / 15 ns 1/ the input power will be reduced if < 10 mhz . 2 / these switching speed dependent on switc h driver circuit to deliver vc = 0/ - 40 v. the rise and fall time of the switch driver which was used to perform for this data is 3 5 ns , as shown on page 5. for further technical information, see gan spdt switch drivers application note
tg s2351 dc C 6 ghz high power spdt switch data sheet: rev b 06/20/12 - 3 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting th e digital world to the global network ? specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of carrier (die mounted to a 20 mil cumo carrier using 1.5 mil 80/20 ausn) tbas e = 70 c jc = 6.1 c/w channel temp erature (tch), and median lifetime (tm) tbase = 70 c, vc 1 = 0 v, vc2 = - 40 v , pin = 40 w , pdiss = 5.3 w tch = 102.5 c tm = 7.2 e+9 hours 1 .e+ 04 1 .e+ 05 1 .e+ 06 1 .e+ 07 1 .e+ 08 1.e+09 1 .e+ 10 1.e+11 1 .e+ 12 1 .e+ 13 1 .e+ 14 1 .e+ 15 25 50 75 100 125 150 175 200 225 250 275 median lifetime, tm (hours) channel temperature, tch ( c) median lifetime (tm) vs. channel temperature (tch) fet 7
tg s2351 dc C 6 ghz high power spdt switch data sheet: rev b 06/20/12 - 4 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting th e digital world to the global network ? typical performanc e - 80 - 70 - 60 - 50 - 40 - 30 - 20 0 1 2 3 4 5 6 7 8 9 10 isolation (db) frequency (ghz) isolation (off - state) vs. frequency vc1 = 0 v, vc2 = - 40 v, +25 0 c - 1.6 - 1.4 - 1.2 - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 insertion loss (db) frequency (ghz) insertion loss (on - state) vs. frequency vc1 = - 40 v, vc2 = 0 v, +25 0 c - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0 1 2 3 4 5 6 7 8 9 10 on - state return loss (db) frequency (ghz) return loss (on - state) vs. frequency vc1 = - 40 v, vc2 = 0 v, +25 0 c irl orl - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 34 36 38 40 42 44 46 loss compression (db) input power (dbm) loss compression vs. pin vs. frequency vc1 = - 40 v, vc2 = 0 v, +25 0 c 1 ghz 2 ghz 3 ghz 4 ghz - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 0 1 2 3 4 5 6 7 8 9 10 off - state output return loss (dbm) frequency (ghz) return loss (off - state) vs. frequency vc 1 = 0 v, vc 2 = - 40 v, + 25 0 c - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 34 36 38 40 42 44 46 loss compression (db) input power (dbm) loss compression vs. pin vs. frequency vc1 = - 40 v, vc2 = 0 v, +25 0 c 100 mhz 300 mhz 500 mhz 700 mhz 900 mhz
tg s2351 dc C 6 ghz high power spdt switch data sheet: rev b 06/20/12 - 5 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting th e digital world to the global network ? typical performance (con t.) switching speed - on < 50 ns vc = 0/ - 40 v, freq = 3 ghz, pin = 30 dbm, +25 0 c switching speed - off < 50 ns vc = 0/ - 40 v, freq = 3 ghz, pin = 30 dbm, +25 0 c 0.00 0.01 0.02 0.03 0.04 0.05 34 36 38 40 42 44 46 control current, ic (ma) input power (dbm) control current vs. pin vc1 = - 40 v, vc2 = 0 v, frequency = 3 ghz, +25 0 c - 2.0 - 1.8 - 1.6 - 1.4 - 1.2 - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 insertion loss (db) frequency (ghz) insertion (on - state) vs. freq vs. temp vc1 = - 40 v, vc2 = 0 v - 55 c +25 c +85 c - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 34 36 38 40 42 44 46 loss compression (db) input power (dbm) loss compression vs. pin vs. temp vc1 = - 40 v, vc2 = 0 v, frequency = 3 ghz - 55 c +25 v +85 c - 5 - 4 - 3 - 2 - 1 0 1 34 36 38 40 42 44 46 loss compression (db) input power (dbm) loss compression vs. pin vs. vc vc2 = 0 v, frequency = 3 ghz, +25 0 c vc1 = - 40 v vc1 = - 30 v vc1 = - 20 v
tg s2351 dc C 6 ghz high power spdt switch data sheet: rev b 06/20/12 - 6 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting th e digital world to the global network ? application circuit vc 1 can be biased from either bond pad 3 or 6, and t he no n - bi ased bond pad can be left open . vc2 can be biased from either bond pad 2 or 7, and the non - biased bond pad can be left open. this swi tch can be configured as a single p ole, single throw (spst) by terminating one unused rf out port with a 50 ohm load . bias - up procedure bias - down procedure vc1 or vc2 set to - 40 v (see function table below for rf path) turn off rf supply vc2 or vc1 set to 0 v (see function table below for rf path) turn vc1 to 0v apply rf signal to rf input turn vc2 to 0 v function table rf path state vc1 vc2 rf in to rf out1 (50 ohm load to rf out2) on - state (insertion loss) 0 v - 40 v off - state (isolation) - 40 v 0 v rf in to rf out2 (50 ohm load to rf out1) on - state (insertion loss) - 40 v 0 v off - state (isolation) 0 v - 40 v 1 5 4 2, 7 3, 6 vc2 j1 rf in vc1 j2 rf out1 j3 rf out2
tg s2351 dc C 6 ghz high power spdt switch data sheet: rev b 06/20/12 - 7 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting th e digital world to the global network ? bond pad description bond p ad symbol description 1 rf in input, matched to 50 ohms , dc coupled 2, 7 v c2 control voltage #2 ; c an be biased from either side ( bond pad 2 or bond pad 7 ) , a nd non - biased bond pad can be left opened ; se e application circuit on page 6 as an example 3, 6 v c1 control voltage #1; c an be biased from either side (bond pad 3 or bond pad 6), and non - biased b ond pad can be left opened; se e application circuit on page 6 as an example 4 rf out1 output #1 , matched to 50 ohms , dc coupled 5 rf out 2 output #2 , matched to 50 ohms , dc coupled 1 2 3 4 5 6 7
tg s2351 dc C 6 ghz high power spdt switch data sheet: rev b 06/20/12 - 8 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting th e digital world to the global network ? assembly drawing rf in rf out2 vc2 vc1 rf out1
tg s2351 dc C 6 ghz high power spdt switch data sheet: rev b 06/20/12 - 9 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting th e digital world to the global network ? mechanical information unit : millimeters thickness: 0.10 die x, y size tolerance: +/ - 0.050 chip edge to bond pad dimensions are shown to center of pad ground is backside of die bond pad symbol pad size 1 rf in 0.100 x 0.200 2, 7 vc2 0.100 x 0.100 3, 6 vc1 0.100 x 0.100 4 rf out1 0.200 x 0.100 5 rf out2 0.200 x 0.100 0.0 1.652 0.176 0.621 0.826 1.031 1.477 0.176 0.377 1.276 1.476 0.175 0.0 0.300 0.919 1.150 0.175 0.300 0.919 0.984 1 2 3 4 5 6 7
tg s2351 dc C 6 ghz high power spdt switch data sheet: rev b 06/20/12 - 10 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting th e digital world to the global network ? product compliance information esd information esd rating: class 1b value: passes ? 5 00 v min. test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony fre e ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce ear99 assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low - power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process as sembly notes: ? use ausn (80/20) solder and limit exposure to temperatures above 300 ? c to 3 - 4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matchi ng is critical for long - term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? alu minum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007 - inch wire.
tg s2351 dc C 6 ghz high power spdt switch data sheet: rev b 06/20/12 - 11 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting th e digital world to the global network ? contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information ab out triquint: web: www.triquint.com tel: +1. 972.994.8465 email: info - sales@tqs.com fax: +1.972.99 4.8504 for technical questions and application information: email: info - products@tqs.com important notice the information contained herein is believed to be reliable . triquint makes no warranties regarding the information contain ed herein . triquint assumes no responsibility or liability whatsoever for any of the information contained her ein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all fau lts, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triqui nt products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual pro perty rights, whether with regard to such information itself or a nything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to caus e severe personal injury or death.

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